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Articles

Vol 10 (2024): Special Postgraduate Issue ICUAP

TUNNELING TRANSISTOR: THE PRESENT QUANTUM PHENOMENON AND ITS ENHANCEMENT

DOI
https://doi.org/10.32399/icuap.rdic.2448-5829.2024.Especial.1349
Submitted
March 27, 2024
Published
April 24, 2024

Abstract

Have you ever wondered how your smartphone works? A key component is the tunneling transistor, based on the physical phenomenon of the same name. This phenomenon allows electrons to penetrate potential barriers, even if they are higher than the energy of the electrons. To achieve this in the transistor, a potential difference is applied to the transistor gate, causing the electrons to find a narrow path so they can jump from one point to another as if it were a tunnel. The conduction band, where the electrons are located, approaches the valence band, where the holes are. When an electron gets close enough to a hole, recombination occurs, generating a neutral atom and releasing energy, which can be used to generate electric current. This tunneling effect has various applications, such as in tunnel effect transistors, which operate at high speeds with low energy consumption. It is also used in tunnel diodes, which are capable of generating high-frequency oscillations. This phenomenon, derived from quantum mechanics, highlights how fundamental principles can impact everyday technology, showing that quantum physics is not foreign to our pragmatic world. In summary, the tunneling transistor, harnessing the fascinating quantum tunneling effect, emerges as a key technology in high-performance electronic devices, underscoring the intersection between theoretical physics and everyday technological innovation.

References

Balestra, F. (2017, September). NanoCMOS and Tunnel FETs for the end of the Roadmap. In Nano and Giga Challenges in Electronics, Photonics and Renewable Energy (Symposium and Summer School). https://nanoandgiga.com/ngc2017/documents/presentation_balestra.pdf

Dubey, P. K. (2019). tunnel FET: Devices and circuits. In Nanoelectronics (pp. 3-25). Elsevier. https://doi.org/10.1016/B978-0-12-813353-8.00002-6

Esaki, L. (1958). New Phenomenon in Narrow Germanium p-n Junctions. Physical Review, 109(2), 603–604. https://doi.org/10.1103/PhysRev.109.603

Colinge, J. P., & Colinge, C. A. (2005). Physics of Semiconductor Devices. Springer Science & Business Media.

A. Chaney, H. Turski, K. Nomoto, Z. Hu, J. Encomendero, S. Rouvimov, T. Orlova, P. Fay, A. Seabaugh, H. G. Xing, et al., “Gallium nitride tunneling field-effect transistors exploiting polarization fields,” Applied Physics Letters, vol. 116, no. 7, p. 073502, 2020. https://doi.org/10.1063/1.5132329

Doria Andrade, J. (2021). Estudio experimental de aleaciones ternarias semimagnéticas de (III-V) (Mn, Cr). Universidad Nacional de Colombia. https://repositorio.unal.edu.co/handle/unal/79705

Yam, F. K., Low, L. L., Oh, S. A., & Hassan, Z. (2011). Gallium nitride: an overview of structural defects. Optoelectronics-Materials and Techniques, 4, 99-136. DOI: 10.5772/19878

Malinverni, M. (2015). Optimization of NH₃-MBE grown p-doped (Al) GaN layers and their implementation in long wavelength laser diodes and tunnel junctions (No. THESIS). EPFL. https://doi.org/10.5075/epfl-thesis-6747

Sze, S. M., Li, Y., & Ng, K. K. (2021). Physics of semiconductor devices. John Wiley & sons.

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